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| CYStech Electronics Corp. N-Channel Logic Level Enhancement Mode Power MOSFET Spec. No. : C430J3 Issued Date : 2008.10.20 Revised Date :2009.02.04 Page No. : 1/7 MEN09N03BJ3 Features * VDS=30V, ID=50A, RDS(ON)=9m * Low Gate Charge * Simple Drive Requirement * RoHS compliant package * Repetitive Avalanche Rated * Fast Switching Characteristic BVDSS 30V ID 50A RDSON 9m Symbol MEN09N03BJ3 Outline TO-252 GGate DDrain SSource GDS Absolute Maximum Ratings (TC=25C) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25C Continuous Drain Current @ TC=100C Pulsed Drain Current Avalanche Current Avalanche Energy @ L=0.1mH, ID=37.5A,Rg=25 Repetitive Avalanche Energy @ L=0.05mH Power Dissipation (TC=25) Power Dissipation (TC=100) Operating Junction and Storage Temperature VDS VGS ID ID IDM IAS EAS EAR PD Tj, Tstg 30 20 50 35 140 *1 37.5 70 15 *2 60 32 -55~+175 V V A A A A mJ mJ W W C 100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=25A, Rated VDS=25V N-CH Note : *1. Pulse width limited by maximum junction temperature *2. Duty cycle1% MEN09N03BJ3 CYStek Product Specification CYStech Electronics Corp. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Spec. No. : C430J3 Issued Date : 2008.10.20 Revised Date :2009.02.04 Page No. : 2/7 Value 2.5 75 Unit C/W C/W Characteristics (Tc=25C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS IGSS IDSS ID(ON) *RDS(ON) Dynamic Rg *Qg(VGS=10V) *Qg(VGS=5V) *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode *IS *ISM *VSD *trr *IRM(REC) *Qrr Min. 30 1.0 50 Typ. 1.7 20 7.5 12 1.7 23 13 4.7 7.4 10 8 30 5 2020 275 160 22 180 12 Max. 3.0 100 1 25 9 15 50 140 1.3 Unit V V S nA A A m nC Test Conditions VGS=0, ID=250A VDS = VGS, ID=250A VDS =5V, ID=20A VGS=20 VDS =24V, VGS =0 VDS =20V, VGS =0, Tj=125C VGS =10V, VDS=10V VGS =10V, ID=25A VGS =5V, ID=20A VGS=15mV, VDS=0, f=1MHz ID=25A, VDS=15V, VGS=10V ns VDS=15V, ID=25A, VGS=10V, RG=2.7, RD=0.6 pF VGS=0V, VDS=15V, f=1MHz A V ns A nC IF=IS, VGS=0 IF=IS, dIF/dt=100A/s *Pulse Test : Pulse Width 300s, Duty Cycle2% Ordering Information Device MEN09N03BJ3 Package TO-252 (RoHS compliant) Shipping 2500 pcs / Tape & Reel Marking 09N03 MEN09N03BJ3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves ON-REGION CHARACTERISTIC 100 Spec. No. : C430J3 Issued Date : 2008.10.20 Revised Date :2009.02.04 Page No. : 3/7 ON-R G C AC R TIC E ION HAR TE IS 5V ON-RESISTANCE VARIATION WITH DRAIN CURRENT AND GATE VOLTAGE IS ON- RES TANCE VARIATION WITH DRAIN CURRENT AND GATE VOLTAGE 3 V GS 3.5V = ID, DRAIN-SOURCE CURRENT(A) I ,DRAIN - S OURCE CURRENT( A ) 80 RDS(ON), NORMALIZED DRAINR ,NORMALIZED SOURCE ON-RESISTANCEISTANCE DRAIN - S OURCE ON - RES 10V 7V 6V 2.5 4.5V 2 4.5V 60 4V 5V 5.5V 40 1.5 6V 7V 10V 20 GS 3.5V V = 3.0V DS (ON) 1 D 0 0 0.5 1 0.5 VDS, DRAIN-SOURCE VOLTAGE(V) DS 2.5 3 3.5 1.5 2 V ,DR AIN- S C VOLTAG ( V) OUR E E 4 4.5 5 0 20 D 40 60 80 100 ID, DRAIN CURRENT(A) I ,DRAIN CURRENT( A ) ON-RESISTANCE VARIATION WITH GATE TO SOURCE VOLTAGE ON-RESISTANCE EVARIATION WITH TEMPERATURE ON- R S TANCVARIATION WITH TEMPERATURE E IS 1.8 ID = 25A VGS= 10V ON-R S TANC VAR E IS E IATIO WITHG -TO O C VO N ATE -S UR E LTAG E 0.030 ID = 25A RDS(ON), NORMALIZED DRAINR ,NORMALIZED SOURCE ON-RESISTANCE DRAIN - S OURCE ON - RES TANCE IS RDS(ON), ,ON-RESISTANCE(OHM) ON-RESISTANCE(OHM) R 1.6 0.025 1.4 0.020 DS (ON) 1.2 0.015 T = 125 C A T = 25 C A 1.0 DS (ON) 0.010 0.8 0.6 0 -50 -25 j 0 25 50 75 100 125 150 175 2 T ,J JUNCTION TEMPERATURE() TJ, UNCTION TEMPERATURE( C) VGS, GATE TO SOURCE VOLTAGE(V) BODY DIODE FORWARD VOLTAGE VARIATION WITH BODYDIODEFOR WAR AND TEMPERATURE S C D E IATION WITH OUR E SOURCE CURRENT VOLTAG VAR 6 4 VS ,G TOS C VO ATE OUR E LTAG E G 8 10 TRANSFERHAR TE IS S TR FE C CHARACTERISTICS ANS R AC R TIC 50 VDS= 10V 40 60 C R NTAND TE E ATUR UR E MP R E VGS=0V VS = 0V G TA = 125C I S ,REVERSDRAIN CURRENT( A IS, REVERSEE DRAINCURRENT(A)) VDS=10V TA = -55 C 25 C 125 C 10 ID, DRAIN CURRENTA ) I D,DRAIN CURRENT( A) 1 25C -55C 0.01 30 0.1 20 10 0.001 0 0.0001 0 VGS, GATE TO SOURCE VOLTAGE(V) MEN09N03BJ3 2 1 ATE OUR E E VGS,G TOS C VOLTAG 3 4 5 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE(V) S VD ,BODYDIODEFOR WAR VOLTAG ( V ) D E CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) GATE CHARGE CHARACTERISTICS G A T E C H A R G E C H A R A C T E R IS T IC S 12 ID = 2 5 A Spec. No. : C430J3 Issued Date : 2008.10.20 Revised Date :2009.02.04 Page No. : 4/7 CA PA CI T A N CE CH A RA CT ERIST ICS 10 4 CAPACITANCE CHARACTERISTICS VGS ,GATE-SOURCE VOLTAGE(V) VGS, GATE-SOURCE VOLTAGE (V) 10 CAPACITANCE (pF) 8 V DS =5V 10V 15V C-CAPACITANCE (pF) Ci ss 10 3 6 Co ss Cr ss 4 10 2 2 f = 1 M Hz V G S= 0 V 0 0 Q g 10 20 ,G A T E C H A R G E (n C ) 30 0 5 10 15 20 25 30 V D S - D RA IN - t o - SO U RCE V LT A G E ( V ) 300 200 100 50 MAXIMUM S OPE ATINGAR A AFE R E MAXIMUM SAFE OPERATING AREA t imi n) L 10 s 100 s 3000 SINGLE PULSE MAXIMUM DIS IPATION S INGLEPULS MAXIMUM POWE POWER DISSIPATION E RS S LEPULS ING E R JC= 2.5C /W C T = 25 C Rds(o 2500 ID, DRAINI CURRENT(A)A ) ,DRAIN CURRENT( 1ms 20 10 5 2 1 POWER(W) W ) POWER( 10m s 100m DC s 2000 1500 1000 D VGS=10V SINGLE PULSE V S = 10V G S LEPULS ING E RJC=25/W R JC= 2.5C /W TC=25C Tc = 25 0.5 1 2 3 5 10 20 30 50 500 0.5 V ,DR DS AIN- S C VOLTAG OUR E E 0 0.01 0.1 10 1 S LEPULS TIME(S C ING E E) 100 1000 VDS, DRAIN- SOURCE VOLTAGE(V) TRANSIENT THERMAL RESISTANCE Transient Thermal R esponse C urve SINGLE PULSE TIME(SEC) 1 r(t), Normalized Effective Transient Thermal Resistance d Effective r(t),Normalize Transient Thermal Resistance 0.5 0.3 0.2 Duty C = 0.5 ycle 0.2 0.1 0.1 0.05 0.05 0.03 0.02 0.02 0.01 S ingle P ulse Notes: DM 1.Duty C ycle,D = t2 2.R =2.5C /W JC t1 3.T - TC = P* R (t) J JC 0.01 -2 10 4.R (t)=r(t) * R JC JC 10 -1 1 t1, Time(sec) 10 100 1000 CYStek Product Specification t 1 ,Time (sec) MEN09N03BJ3 CYStech Electronics Corp. Reel Dimension Spec. No. : C430J3 Issued Date : 2008.10.20 Revised Date :2009.02.04 Page No. : 5/7 Carrier Tape Dimension MEN09N03BJ3 CYStek Product Specification CYStech Electronics Corp. Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 C Spec. No. : C430J3 Issued Date : 2008.10.20 Revised Date :2009.02.04 Page No. : 6/7 Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Note : All temperatures refer to topside of the package, measured on the package body surface. Profile feature Average ramp-up rate (Tsmax to Tp) Preheat -Temperature Min(TS min) -Temperature Max(TS max) -Time(ts min to ts max) Time maintained above: -Temperature (TL) - Time (tL) Peak Temperature(TP) Time within 5C of actual peak temperature(tp) Ramp down rate Time 25 C to peak temperature Sn-Pb eutectic Assembly 3C/second max. 100C 150C 60-120 seconds 183C 60-150 seconds 240 +0/-5 C 10-30 seconds 6C/second max. 6 minutes max. Pb-free Assembly 3C/second max. 150C 200C 60-180 seconds 217C 60-150 seconds 260 +0/-5 C 20-40 seconds 6C/second max. 8 minutes max. MEN09N03BJ3 CYStek Product Specification CYStech Electronics Corp. TO-252 Dimension A C Spec. No. : C430J3 Issued Date : 2008.10.20 Revised Date :2009.02.04 Page No. : 7/7 Marking: B L F G D Device Name Date code 09N03 3 H E K 2 I 1 J Style: Pin 1.Gate 2.Drain 3.Source 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 *: Typical DIM A B C D E F Inches Min. Max. 0.0177 0.0217 0.0650 0.0768 0.0354 0.0591 0.0177 0.0236 0.2441 0.2677 0.2125 0.2283 Millimeters Min. Max. 0.45 0.55 1.65 1.95 0.90 1.50 0.45 0.60 6.20 6.80 5.40 5.80 DIM G H I J K L Inches Min. Max. 0.0866 0.1102 *0.0906 0.0449 0.0346 0.2047 0.2165 0.0551 0.0630 Millimeters Min. Max. 2.20 2.80 *2.30 1.14 0.88 5.20 5.50 1.40 1.60 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead : KFC; tin plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MEN09N03BJ3 CYStek Product Specification |
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